Impact of CnRx Structure on Soft Error Rates of Flip-Flop Designs at 22-Nm FD SOI Node

Christopher J. Elash,Zongru Li,Chen Jin,Li Chen,Shi-Jie Wen,Rita Fung,Jiesi Xing,Shuting Shi,Zhi Wu Yang,Bharat L. Bhuva

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）

引用 1|浏览4

关键词

Transistors,Layout,Silicon-on-insulator,Flip-flops,Strain,Ions,Logic gates,CnRx,eSiGe,flip-flop (FF),fully depleted silicon on insulator (FD SOI),radiation hardening by design,single event upset (SUE),soft-error rate,stacked transistor,strain

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