Low-Frequency and Random Telegraph Noise in 14-Nm Bulk Si Charge-Trap Transistors

Mariia Gorchichko,En Xia Zhang,Mahmud Reaz,Kan Li,Peng Fei Wang,Jingchen Cao,Rachel M. Brewer,Ronald D. Schrimpf,Robert A. Reed,Brian D. Sierawski,Michael L. Alles,Jonathan Cox,Steven L. Moran,Subramanian S. Iyer,Daniel M. Fleetwood

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

引用 3|浏览52

关键词

1/f noise,charge trap transistor (CTT),defects,finFET,HfO2,low-frequency noise (LFN),random telegraph noise (RTN),random telegraph signal (RTS),total-ionizing dose (TID)

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