TCAD Simulation Performance of VGAA for 4F2 High Density DRAM Cell
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)（2022）
Key words
3D-TCAD,4F2 high density DRAM cell,bit line coupling capacitance,data normalization,DRAM technology node,JL-VGAA device,junctionless vertical gate all around device,low-level channel doping,R&D cost,TCAD simulation performance,word line coupling capacitance
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