Novel 2T DRAM by Storing Data in One Alternative Gate of a Double-Gate Transistor with a Low-leakage Oxide Transistor
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)（2022）
关键词
2T DRAM,2T storage cell,data storage node,double-gate transistor,low-leakage oxide transistor,TCAD simulation
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