Total Ionizing Dose Response of a 22-Nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Lawrence T. Clark,William E. Brown,Keith E. Holbert,A. Rao,P. Bikkina,Marek Turowski,Andrew Levy, T. Olvarez,Jim D. Butler,Clifford S. YoungSciortino,Steven M. Guertin

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）

Cited 3|Views20

Key words

Transistors,Silicon-on-insulator,Integrated circuits,SRAM cells,Radiation effects,MOS devices,Circuit stability,Fully depleted silicon-on-insulator (FDSOI),static random access memory (SRAM),total ionizing dose (TID)

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