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Effect of Substrate Misorientation on the Properties of P-Hemt GaAs-based Nanoheterostructures Formed During MOCVD Epitaxy

P. B. Boldyrevskii,D. O. Filatov, V. A. Belyakov,A. P. Gorshkov,I. V. Makartsev,A. V. Nezhdanov,M. V. Revin,A. D. Filatov, P. A. Junin

TECHNICAL PHYSICS（2024）

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关键词
GaAs/InGaAs/GaAlAs heterostructures,MOCVD epitaxy,p-HEMT,substrate misorientation,comparative characteristics of structures and p-HEMT based on them
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