Low Temperature Source/drain Epitaxy and Functional Silicides: Essentials for Ultimate Contact Scaling
2022 International Electron Devices Meeting (IEDM)（2022）
Key words
contact resistivities,contact scaling,exploratory contact metals,functional silicides,logic devices,low temperature source-drain epitaxy,metal-to-metal interfaces,reaction mechanisms,SiGe/int,Ti-Si:P/int
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