Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents
2022 International Electron Devices Meeting (IEDM)（2022）
关键词
3D monolithic integration,atomic-layer-deposited gate-all-around single-channel nanoribbon field-effect transistors,back-end-of-line compatible FETs,bias instability,channel width independent positive threshold voltage,competitive channel material,comprehensive reliability analysis,conduction band,donor-and acceptor-like trap generation,drain voltage,GAA FET reliability,gate bias dependence,gate bias stress conditions,gate dielectric,HfO2/int,IGZO thin film transistors,In2O3/int,maximum on-state current,negative gate bias stress,next generation ICs,positive gate bias stress,Si/el,size 5.0 nm,temperature dependence,TFTs,TNL,trap neutral level,ultra-high drain currents,voltage 1.7 V
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要