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The Effect of Collector Region Design on Large-Signal Performance of Horizontal Current Bipolar Transistor (HCBT)

IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)

Cited 0|Views6
Key words
BiCMOS technology,bipolar transistors,breakdown,horizontal current bipolar transistor (HCBT),Kirk effect,linear operating area,radio frequency (RF) power amplifiers (PAs)
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