Effects of Polycrystalline Silicon Plug Defect on DRAM Characteristics
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
Random access memory,Resistance,Silicon,Electrical resistance measurement,Contact resistance,Plugs,Transistors,DRAM characteristics,DRAM reliability,Index Terms,dynamic random access memory (DRAM),failure test,polysilicon defect,polysilicon seam,polysilicon void,silicon plug,storage node contact (SNC)
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