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A Novel Negative Quantum Capacitance Field-Effect Transistor with Molybdenum Disulfide Integrated Gate Stack and Steep Subthreshold Swing for Ultra-Low Power Applications

Science China Information Sciences(2023)

Cited 4|Views17
Key words
negative quantum capacitance,molybdenum disulfide,field-effect transistor,subthreshold swing,ultra-low power device
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