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High-Throughput Computational Screening of All-MXene Metal-Semiconductor Junctions for Schottky-Barrier-Free Contacts with Weak Fermi-Level Pinning

SMALL(2023)

Cited 19|Views17
Key words
all-MXene metal-semiconductor junctions,carrier tunneling probability,Fermi-level pinning,high-throughput calculations,interface polarization
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