3.7-Ghz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2023）
关键词
SRAM,3nm FinFET,Cache family,Wordline driver sleep,Write driver sleep
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要