Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT（2023）
关键词
performance optimization,SOT switching properties,SOT switching voltage,SOT-MRAM cell,SOT-MRAM structure,spin-orbit torque magnetic random access memory,structure optimization,thermal stability factor,TMR
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