Optimization of C Doped Buffer Layer to Minimize Current Collapse in Al_0.83In_0.17N/GaN HEMT by Studying Drain Lag Transients

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA)（2020）

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Key words

AlInN/GaN high-electron-mobility-transistor (HEMT),device simulation,drain lag,buffer traps,current-collapse,C-doped GaN buffer

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Optimization of C Doped Buffer Layer to Minimize Current Collapse in Al0.83In0.17N/GaN HEMT by Studying Drain Lag Transients