A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

Keji Zhou,Xinru Jia,Chenyang Zhao,Xumeng Zhang, Guangjian Wu,Chen Mu,Haozhe Zhu,Yanting Ding,Chixiao Chen,Xiaoyong Xue,Xiaoyang Zeng,Qi Liu

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS（2022）

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关键词

Capacitance, Circuits and systems, Voltage, Resistance, Pulse width modulation, Switching circuits, Nonvolatile memory, ReRAM, 4T2R, neural network (NN), computing-in-memory (CIM), artificial intelligence (AI)

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