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1.2-Kv Vertical GaN PIN Rectifier with Ion-Implanted Floating Guard Rings

Minkyu Cho,Zhiyu Xu,Marzieh Bakhtiary-Noodeh,Theeradetch Detchprohm, Matthias A. Daeumer,Jae-Hyuck Yoo,Qinghui Shao,Ted A. Laurence,Daryl Key,Tadao Hashimoto,Edward Letts,Russell D. Dupuis,Shyh-Chiang Shen

IEEE Transactions on Electron Devices（2023）

Cited 5|Views0
Key words
Edge termination,field guard rings,gallium nitride (GaN),ion implantation,p-i-n (PIN) rectifiers,power devices
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