A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability.
DRC（2023）
Key words
E-mode operation,fin-p-gallium nitride gate HEMT,gallium nitride epistructure,gallium nitride-on-silicon high electron mobility transistors,GaN-Si/int,gate driving circuit design,power electronic subsystems,system reliability degradation,volume miniaturization,wide band gap characteristics
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined