Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI

Pietro Rinaudo,A. Chasin,J. Franco,Z. Wu,S. Subhechha,G. Arutchelvan,G. Eneman, B. Y. V. Ramana,N. Rassoul,R. Delhougne,B. Kaczer,I. De Wolf,G. S. Kar

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY（2023）

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关键词

Degradation,Stress,Logic gates,Temperature measurement,Thin film transistors,Materials reliability,Contact resistance,IGZO,BTI,hot carrier degradation,reliability

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