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Effect of Process Parameters on Co-Sputtered Al(1-x)ScxN Layer's Properties: Morphology, Crystal Structure, Strain, Band Gap, and Piezoelectricity

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(2024)

Cited 3|Views9
Key words
Al(1-x)ScxN thin film,Pulse DC reactive ion co-sputtering,In-plane residual stress,Optical band gap,Direct and converse piezoelectricity,Piezoresponse force microscopy,X ray Diffractometry
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