Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS（2024）
关键词
Logic gates,Memristors,Transistors,Current measurement,Switches,Resistance,Logic arrays,non-stateful logic,scouting logic,experimental demonstration,reliability issues
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