InP DHBT Linear Modulator Driver with a 3-Vppd PAM-4 Output Swing at 90 GBaud: from Enhanced Transistor Modeling to Integrated Circuit Design
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES（2024）
关键词
Indium phosphide,DH-HEMTs,III-V semiconductor materials,Integrated circuits,Bandwidth,Modulation,Gain,Four-level pulse amplitude modulation (PAM-4),high-speed integrated circuits (ICs),indium phosphide (InP) double heterojunction bipolar transistor (DHBT),large-swing linear modulator driver,Tb/s optical communications
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