A 170 GHz GaN-Based Frequency Doubler with over 500 Mw Output Power
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)（2023）
关键词
compact microstrip resonating cell,efficiency 12.5 percent to 15 percent,expected terahertz frequencies,frequency 167.0 GHz to 173.0 GHz,frequency 170.0 GHz,GaN planar Schottky barrier diode technology,GaN SBD chip,GaN-based frequency doubler,GaN/int,microstrip-to-waveguide transition,power 430.0 mW,power 500.0 mW,power 508.0 mW,power 520.0 mW,satisfactory power handling capabilities,suspended microstrip
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