Lowest IOFF < 3×10−21 A/μm in Capacitorless DRAM Achieved by Reactive Ion Etch of IGZO-TFT
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2023）
关键词
DRAM,IGZO,RIE,2T0C,Capacitorless
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