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Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

G. Hu,M. G. Gottwald,Q. He,J. H. Park,G. Lauer,J. J. Nowak,S. L. Brown,B. Doris,D. Edelstein,E. R. Evarts,P. Hashemi,B. Khan,Y. H. Kim,C. Kothandaraman,N. Marchack,E. J. O'Sullivan,M. Reuter,R. P. Robertazzi,J. Z. Sun,T. Suwannasiri,P. L. Trouilloud,Y. Zhu,D. C. Worledge

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

Cited 14|Views25
Key words
free layer identification,magnetic tunnel junction,blanket film Gilbert damping constant,RA,compatible p-MTJ,compatible double MTJ,perpendicular magnetic tunnel junction materials,device resistance-area product,perpendicular magnetic anisotropy,STT-MRAM devices,STT-MRAM switching efficiency,temperature 400.0 degC
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