A Generic Framework for MOSFET Reliability-Part II: Gate and Drain Stress-HCD
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Circuit aging,compact model,Hot Carrier Degradation (HCD),Reaction Diffusion Drift (RDD) model,Self-Heating (SH) effect,Spherical Harmonics Expansion (SHE),SPICE,Technology CAD (TCAD)
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