Sensitivity Investigation of 100-Mev Proton Irradiation to SiGe HBT Single Event Effect

Ya-Hui Feng,Hong-Xia Guo,Yi-Wei Liu,Xiao-Ping Ouyang,Jin-Xin Zhang,Wu-Ying Ma,Feng-Qi Zhang,Ru-Xue Bai,Xiao-Hua Ma,Yue Hao

CHINESE PHYSICS B（2024）

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关键词

silicon-germanium heterojunction bipolar transistor (SiGe HBT),100-MeV proton,technology computer-aided design (TCAD),single event effect (SEE),61.72.uf,61.80.Ed,61.80.-x,61.80.Jh

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