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Workable Use of AlGaN/GaN D-Mode MIS-HEMTs in Realization of Highly Linear Passive Mixers Without Negative Biasing

Ruolan Shi, Zixuan Zhang,Miao Cui,Sang Lam

2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)(2023)

Cited 0|Views5
Key words
RF mixer,D-mode MIS-HEMT,gallium nitride (GaN),depletion-mode FET,linearity,passive mixer
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