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Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Xiaoming Wang,Wanjun Chen,Ruize Sun,Chao Liu,Xinghuan Chen,Yun Xia,Xiaorui Xu, Zhuocheng Wang,Pan Luo,Yuhao Zhang,Bo Zhang

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

Cited 1|Views23
Key words
Degradation and failure behavior,failure mechanism,p-GaN high-electron-mobility transistors (HEMTs),surge current,surge voltage
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