LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Arijit Sengupta,Dennis R. Ball,Andrew L. Sternberg,Sajal Islam,Aditha S. Senarath,Robert A. Reed,Michael W. McCurdy,En Xia Zhang,John M. Hutson,Michael L. Alles,Jason M. Osheroff, Biju Jacob,Collin W. Hitchcock, Shubhodeep Goswami,Ronald D. Schrimpf,Kenneth F. Galloway,Arthur F. Witulski

IEEE Transactions on Nuclear Science（2024）

Cited 3|Views27

Key words

Silicon carbide,MOSFET,Degradation,Radiation effects,Ions,Leakage currents,Threshold voltage,Heavy ion,metal-oxide-semiconductor field-effect transistor (MOSFET),positive-intrinsic-negative (p-i-n) diodes,power diodes,silicon carbide (SiC),single-event burnout (SEB),single-event effects,single-event leakage current (SELC)

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