Low-Frequency Noise and Deep Level Transient Spectroscopy in N-P-n Si Bipolar Junction Transistors Irradiated with Si Ions

Xuyi Luo,Jossue Montes, Sabina D. Koukourinkova, Bastiaan L. Vaandrager,Edward S. Bielejec,Gyorgy Vizkelethy,Ronald D. Schrimpf,Daniel M. Fleetwood,En Xia Zhang

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2024）

引用 1|浏览6

关键词

Silicon,Ions,Temperature measurement,Semiconductor device measurement,Junctions,Radiation effects,Noise measurement,Bipolar transistors,deep level transient spectroscopy (DLTS),defects,displacement damage,low-frequency (LF) noise

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要