活性ゲートとコバルト局所相互接続上の接触10nm高性能および低電力CMOS技術を特徴とする3~rd発生FinFETトランジスタ,自己整合4パターン形成【Powered by NICT】
C Auth, A Aliyarukunju,M Asoro,D Bergstrom,V Bhagwat, J Birdsall, N Bisnik,M Buehler,V Chikarmane, G Ding, Q Fu,H Gomez,W Han, D Hanken,M Haran,M Hattendorf,R Heussner,H Hiramatsu, B Ho,S Jaloviar,I Jin,S Joshi, S Kirby, S Kosaraju,H Kothari,G Leatherman, K Lee,J Leib,A Madhavan, K Marla, H Meyer,T Mule,C Parker, S Parthasarathy,C Pelto,L Pipes,I Post,M Prince,A Rahman, S Rajamani, A Saha, Santos J. Dacuna,M Sharma, Vrinda Sharma,J Shin,P Sinha, P Smith,M Sprinkle, A Amour, C Staus, R Suri, D Towner, Aditi Kumar Tripathi,A Tura, C Ward,A Yeoh IEEE Conference Proceedings（2017）
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