(TSV)技術によるによるシリコンにより可能になった垂直チャネルデバイス【Powered by NICT】

C. Kothandaraman,S Rosenblatt,John Safran, Phil Oldiges, P Kulkarni-Kerber, J Xumalo,W. Landers, J Liu, Jennifer Oakley, Shariq Aziz Butt,Troy Graves-Abe,Norman Robson, Muhamed Farooq, Dror Berger, Sridhar Iyer

IEEE Conference Proceedings（2016）

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