Scaling the SOT Track – A Path Towards Maximizing Efficiency in SOT-MRAM

S. Van Beek,K. Cai,F. Yasin,H. Hody,G. Talmelli,V.D. Nguyen, N. Franchina Vergel, A. Palomino,A. Trovato,K. Wostyn,S. Rao,G.S. Kar,S. Couet

2023 International Electron Devices Meeting (IEDM)（2023）

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关键词

Spin-orbit Torque,Endurance,Power Consumption,Device Performance,Current Switching,Tunnel Junction,Free Layer,Significantly Improved,Length Scale,Integration Process,Hysteresis Loop,Bit Error Rate,Conventional Devices,Technology Node,Track Width

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