First Demonstration of True 4-Bit Memory with Record High Multibit Retention >103s and Read Window >105 by Hydrogen Self-Adaptive-Doping for IGZO DRAM Arrays

Gangping Yan,Yanna Luo,Jianjian Wang,Zhiyu Song,Chuqiao Niu,Shangbo Yang,Guoliang Tian,Jiaxin Yao,Xueli Ma,Qingzhu Zhang,Jinjuan Xiang, Na Zhou,Guilei Wang,Gaobo Xu,Zhenhua Wu,Jinshun Bi,Chao Zhao,Jun Luo,Huaxiang Yin

2023 International Electron Devices Meeting (IEDM)（2023）

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关键词

True Memory,Reading Window,Chromatography,Performance Variables,Contact Resistance,Memory State,Memory Window,Return On Sales,Treatment Time,Temperature Conditions,Temperature Treatment,O2 Flow,Hydrogen Density

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