Dissolution of Mg-enriched Defects in Implanted GaN and Increased P-Type Dopant ActivationK. Huynh, Y. Wang,M. E. Liao,J. Tweedie,P. Reddy,M. H. Breckenridge,R. Collazo,Z. Sitar,K. Sierakowski,M. Bockowski, X. Huang,M. Wojcik,M. S. GoorskyJOURNAL OF APPLIED PHYSICS（2024）引用 2|浏览15关键词AlGaN/GaN HEMTsAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
