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Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. -Y Hsiang,F. -S Chang,Z. -F Lou,A. Aich,A. Senapati,J. -Y Lee,Z. -X Li, J. -H Chen,C. -H Liu,C. W. Liu,S. Maikap,P. Su,T. -H Hou,M. H. Lee

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

Cited 1|Views18
Key words
Nonvolatile memory,Random access memory,Iron,Ferroelectric films,Switches,Zirconium,Leakage currents,Endurance,ferroelectric (FE),recovery
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