Abnormal Positive Shift of Threshold Voltage in Praseodymium-Doped InZnO-TFTs under Negative Bias Illumination Temperature Stress
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Lighting,Doping,Logic gates,Stress,Thermal stability,Threshold voltage,Thin film transistors,Dipole,negative bias illumination temperature stress (NBITS),praseodymium (Pr) doping,thin-film transistor (TFT)
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