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Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack

Zsolt Fogarassy,Aleksandra Wójcicka,Ildikó Cora,Adel Sarolta Rácz,Szymon Grzanka,Erzsébet Dodony,Piotr Perlin,Michał A. Borysiewicz

Materials Science in Semiconductor Processing（2024）

Cited 0|Views18
Key words
Ohmic contact,Gallium nitride,GaN,N-face GaN,Al/Ti,TEM
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