Dynamic $\textit{R}_{\bioscc{on}}$ Degradation in AlGaN/GaN MIS-HEMTs With Si$_{\text{3}}$N$_{\text{4}}$ or Si$_{\text{3}}$N$_{\text{4}}$/ZrO$_{\text{2}}$ Passivation Layer
IEEE Transactions on Electron Devices(2024)
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