Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors with ~140-Nm Gate Length

Ahmad E. Islam,Nicholas P. Sepelak, Adam T. Miesle,Hanwool Lee,Michael Snure, Stefan Nikodemski,Dennis E. Walker,Nicholas C. Miller,Matt Grupen,Kevin D. Leedy,Kyle J. Liddy,Antonio Crespo,Gary R. Hughes,Wenjuan Zhu,Brian Poling,Stephen Tetlak,Kelson D. Chabak,Andrew J. Green

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

Air Force Res Lab

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Abstract

High temperature (HT) electronics applica-tions will require the development of a broad range ofdevices made using different materials. Among thesedevices, high-electron mobility transistors (HEMTs) madewith GaN and its alloys are attractive for high-power radiofrequency (RF) applications. In this manuscript, we testedAlGaN/GaN HEMT devices having similar to 140-nm gate length atdifferent temperatures up to 500 degrees C. Devices were fab-ricated using Air Force Research Laboratory's (AFRL's)140-nmT-gate process technology. The performancedegradation measured in different devices was analyzed byconsidering changes in different device parameters and byusing appropriate device physics. Cross-sectional materi-als characterization using scanning transmission electronmicroscopy (STEM) and electron energy loss spectroscopy(EELS) was performed to understand the origin of perfor-mance degradation. This understanding will allow us todesign a sub-mu m GaN-based process technology compat-ible with HT RF applications

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Key words

Logic gates,Temperature measurement,MODFETs,HEMTs,Performance evaluation,Metals,Wide band gap semiconductors,AlGaN/GaN high electron mobility transistors (HEMTs),degradation,high temperature (HT) electronics,leakage,time-dependence,transconductance

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