3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems

Kyumin Lee,Seungkwon Hwang,Dongmin Kim,Jongwon Yoon,Jung-Dae Kwon,Yonghun Kim,Hyunsang Hwang

ADVANCED FUNCTIONAL MATERIALS（2024）

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关键词

3D structure,atmospheric-pressure plasma-enhanced chemical vapor deposition,electrochemical random-access memory,ion-barrier,synapse device,vertical-sensing,WS2

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