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Material Properties of N‐type Β‐ga2o3 Epilayers with in Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Fu-Gow Tarntair,Chih-Yang Huang,Siddharth Rana, Lin,Shao-Hui Hsu,Yu-Cheng Kao,Singh Jitendra Pratap,Yi-Che Chen,Niall Tumilty,Po-Liang Liu,Ray-Hua Horng

ADVANCED ELECTRONIC MATERIALS（2024）

Cited 8|Views11
Key words
density functional theory,heteroepitaxial Ga2O3, MOCVD,in situ doping,TEOS
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