Influence of the Content of Impurities and Structural Defects on the Properties of the Cd0.9Mn0.1Te:V-based Detector
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature（2025）
Abstract
The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life time of nonequilibrium charge carriers τ, charge collection efficiency η. The optimal ranges of energy change and deep donor concentration, which ensure a high-resistive state and acceptable values of τ and η, are established. The authors study the compensation of cadmium vacancies with vanadium admixture.
MoreTranslated text
Key words
cdmnte,detector properties,simulation,structure defects,deep levels
求助PDF
上传PDF
View via Publisher
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Data Disclaimer
The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn
Chat Paper
Summary is being generated by the instructions you defined