Wide Process Temperature of Atomic Layer Deposition for In2o3 Thin-Film Transistors Using Novel Indium Precursor (N,n’-Di-tert Butylacetimidamido)Dimethyllindium)

Ju-Hun Lee,Seung-Youl Kang,Changbong Yeon,Jong-Heon Yang,Jaesun Jung,Kok Chew Tan,Kitae Kim,Yeonjin Yi,Soohyung Park,Chi-Sun Hwang,Jaehyun Moon

Nanotechnology（2024）

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关键词

In precursor,(N, N '-di-tert-butylacetimidamido)dimethyllindium (DBDMI),atomic layer deposition,thin-film transistors,indium oxide semiconductor,high temperature deposition

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