Numerical Simulation of Single-Particle Transients in Low-Noise Amplifiers Based on Silicon-Germanium Heterojunction Bipolar Transistors and Inverse-Mode Structures
Acta Physica Sinica（2024）
Key words
silicon-germanium heterojunction bipolar transistor,single particle effect,inverse mode,hybrid simulation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined