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Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT

Umang Singh,Hannah Genath,Ritam Sarkar,Jan Kruegener,H. Joerg Osten,Apurba Laha

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2024）

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