Exploring the Potential of InCp Precursor in Plasma-Enhanced Atomic Layer Deposition for High-Performance IZO-TFTs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Thin film transistors,Plasma temperature,Indium,Zinc oxide,Zinc,II-VI semiconductor materials,Chemicals,Atomic layer deposition (ALD),high mobility,indium-zinc oxide (IZO),stability,thin-film transistors (TFTs)
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