Gate Side Injection Operating Mode for 3D NAND Flash Memories
2024 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW（2024）
Key words
Operation Mode,Flash Memory,Side Gate,NAND Flash,NAND Flash Memory,3D NAND Flash,Stacked Layers,Ferroelectric,Program Characteristics,Gate Electrode,Layer In Order,Charge Trapping,Charge Injection,Memory Window,Impact Of Switching,Ferroelectric Switching,Gate Stack,Parasite,Positive Bias,Charge Storage,Ferroelectric Layer,Side-channel,Programming Voltage,Retention Performance,Electron Injection
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