Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated P-Gan HEMTs Circuit Using ASM-GaN Model
IEEE Journal of the Electron Devices Society（2024）
Key words
Integrated circuit modeling,Capacitance,MODFETs,HEMTs,Performance evaluation,Gallium nitride,Data models,GaN HEMTs,ASM model,hydrogen plasma treatment,DCFL circuit,capacitance,dynamic performance
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